Search results for "Charge Carriers"
showing 4 items of 4 documents
Electronic functionality of Gd-bisphthalocyanine: Charge carrier concentration, charge mobility, and influence of local magnetic field
2018
Abstract Gadolinium bisphthalocyanine (GdPc2) has been placed among the highest ranked molecular materials considered namely for modern optoelectronic applications including organic solar cells. To improve understanding of the correlation between GdPc2 magnetic properties and its electronic functionality, we experimentally and theoretically studied charge carrier concentration, charge mobility, and influence of local magnetic field on charge carrier transport. For better clearance, all the main studied properties of GdPc2 bisphthalocyanine were compared with Zn phthalocyanine (ZnPc) as a reference material. Conductivity and charge carrier mobility were measured in materials incorporated in …
Photoconductivity and photovoltaic effect in indium selenide
1983
Transport and phototransport properties of crystalline indium monoselenide (InSe) doped with a variety of elements are reported. Measured mobilities, lifetimes, and effective diffusion lengths of photoexcited carriers are used to interpret electrical and photovoltaic properties of several different structures. These include p‐n junctions, bismuth/p‐type InSe, platinum/n‐type InSe, and indium tin oxyde (ITO)/p‐type InSe. External solar efficiencies of the best devices are between 5% and 6%. The influence on the efficiency of the various parameters is evaluated, and ways of improvement are discussed.
Relaxation of photogenerated carriers in P3HT:PCBM organic blends.
2009
Relaxing in the sunlight. Long time-transient decays of photogenerated carriers in P3HT:PCBM blends for organic solar cells are interpreted in terms of the relaxation of hole carriers in a broad density of states. The after-pulse time-resolved microwave conductivity (TRMC) decays observed in P3HT:PCBM blends display a dependence on time close to t−β, independent of excitation intensity, in the 10 ns–1 μs range. This is explained in terms of the relaxation of carriers in a Gaussian density of states (DOS). The model is based on a demarcation level that moves with time by thermal release and retrapping of initially trapped carriers. The model shows that when the disorder is large the after-pu…
Tuning the Photoresponse of Nano‐Heterojunction: Pressure‐Induced Inverse Photoconductance in Functionalized WO 3 Nanocuboids
2019
S.R. and S.S. contributed equally to this work. This work was mainly supported by the Natural Science Foundation of China (Grant No. 11874076), National Science Associated Funding (NSAF, Grant No. U1530402), and Science Challenging Program (Grant No. TZ2016001). D.E. thanks the financial support from Spanish MINECO under Grant No. MAT2016-75586-C4-1-P and from Generalitat Valenciana under Grant Prometeo/2018/123, EFIMAT. The X-ray diffraction measurements were performed at the BL15U1 station, Shanghai Synchrotron Radiation Facility (SSRF) in China. The HP XAS measurements were performed at 20 ID-C, APS, ANL. APS is supported by DOE-BES, under contract no. DE-AC02-06CH11357. The authors grat…